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insulated gate bipolar transistor with ultrafast soft recovery diode 02/27/06 features ? low v ce (on) non punch through igbt technology. low diode v f . 10s short circuit capability. square rbsoa. ultrasoft diode reverse recovery characteristics. positive v ce (on) temperature coefficient. to-247ad package lead-free www.irf.com 1 benefits benchmark efficiency for motor control. rugged transient performance. low emi. excellent current sharing in parallel operation. irgp30b60kd-ep e g n-channel c v ces = 600v i c = 30a, t c =100c t sc > 10s, t j =150c v ce(on) typ. = 1.95v to-247ad parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 60 i c @ t c = 100c continuous collector current 30 i cm pulsed collector current 120 i lm clamped inductive load current 120 a i f @ t c = 25c diode continuous forward current 60 i f @ t c = 100c diode continuous forward current 30 i fm diode maximum forward current 120 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 304 p d @ t c = 100c maximum power dissipation 122 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1nm) absolute maximum ratings parameter min. typ. max. units r jc junction-to-case - igbt ??? ??? 0.41 r jc junction-to-case - diode ??? ??? 1.32 r cs case-to-sink, flat, greased surface ??? 0.24 ??? r ja junction-to-ambient, typical socket mount ??? ??? 40 wt weight ??? 6.0 ??? g c/w thermal resistance

irgp30b60kd-ep 2 www.irf.com notes: electrical characteristics @ t j = 25c (unless otherwise specified) v cc = 80% (v ces ), v ge = 15v, l = 28h, r g = 22 ?. energy losses include "tail" and diode reverse recovery. 22 parameter min. typ. max. units conditions qg total gate charge (turn-on) ??? 102 153 i c = 30a qge gate - emitter charge (turn-on) ??? 14 21 nc v cc = 400v qgc gate - collector charge (turn-on) ??? 44 66 v ge = 15v e on turn-on switching loss ??? 350 620 j i c = 30a, v cc = 400v e off turn-off switching loss ??? 825 955 v ge =15v, r g = 10 ?, l=200h, e tot total switching loss ??? 1175 1575 l s = 150nh t j = 25c t d(on) turn-on delay time ??? 46 60 i c = 30a, v cc = 400v t r rise time ??? 28 39 v ge = 15v, r g = 10 ? l =200h t d(off) turn-off delay time ??? 185 200 ns l s = 150nh, t j = 25c t f fall time ??? 31 40 e on turn-on switching loss ??? 635 1085 i c = 30a, v cc = 400v e off turn-off switching loss ??? 1150 1350 j v ge = 15v,r g = 10 ?, l =200h e tot total switching loss ??? 1785 2435 l s = 150nh t j = 150c t d(on) turn-on delay time ??? 46 60 i c = 30a, v cc = 400v t r rise time ??? 28 39 v ge = 15v, r g = 10 ? l =200h t d(off) turn-off delay time ??? 205 235 ns l s = 150nh, t j = 150c t f fall time ??? 32 42 c ies input capacitance ??? 1750 ??? v ge = 0v c oes output capacitance ??? 160 ??? pf v cc = 30v c res reverse transfer capacitance ??? 60 ??? f = 1.0mhz t j = 150c, i c = 120a, vp =600v v cc = 500v, v ge = +15v to 0v, t j = 150c, vp =600v, r g = 10 ? v cc = 360v, v ge = +15v to 0v erec reverse recovery energy of the diode ??? 925 1165 j t j = 150c t rr diode reverse recovery time ??? 125 ??? ns v cc = 400v, i f = 30a, l = 200h i rr diode peak reverse recovery current ??? 43 48 a v ge = 15v,r g = 10 ?, l s = 150nh switching characteristics @ t j = 25c (unless otherwise specified) rbsoa reverse bias safe operting area full square scsoa short circuit safe operting area 10 ??? ??? ref.fig. 23 ct.1 ct.4 ct.4 13,15 wf1,wf2 4 ct.2 ct.3 wf.4 17,18,19 20,21 ct.4,wf.3 ct.4 r g =10 ? ct.4 14, 16 wf1,wf2 s ref.fig. 5, 6,7 9, 10,11 9,10,11 12 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ??? ??? v v ge = 0v, i c = 500a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ??? 0.4 ??? v/c v ge = 0v, i c = 1.0ma, (25c-150c) v ce(on) collector-to-emitter saturation voltage ??? 1.95 2.35 v i c = 30a, v ge = 15v ??? 2.40 2.75 i c = 30a,v ge = 15v, t j = 150c v ge(th) gate threshold voltage 3.5 4.5 5.5 v v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ??? -10 ??? mv/c v ce = v ge , i c = 1.0ma, (25c-150c) g fe forward transconductance ??? 18 ??? s v ce = 50v, i c = 50a, pw=80s i ces zero gate voltage collector current ??? 5.0 250 a v ge = 0v, v ce = 600v ??? 1000 2000 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ??? 1.30 1.55 v i f = 30a ??? 1.25 1.50 i f = 30a t j = 150c i ges gate-to-emitter leakage current ??? ??? 100 na v ge = 20v 8
irgp30b60kd-ep www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c; t j 150c fig. 4 - reverse bias soa t j = 150c; v ge =15v 0 20 40 60 80 100 120 140 160 t c (c) 0 50 100 150 200 250 300 350 p t o t ( w ) 0 20 40 60 80 100 120 140 160 t c (c) 0 20 40 60 80 i c ( a ) 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 10 s 100 s 1ms dc 10 100 1000 v ce (v) 1 10 100 1000 i c a )
irgp30b60kd-ep 4 www.irf.com fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80s fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80s fig. 8 - typ. diode forward characteristics tp = 80s fig. 7 - typ. igbt output characteristics t j = 150c; tp = 80s 012345 v ce (v) 0 10 20 30 40 50 60 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 012345 v ce (v) 0 10 20 30 40 50 60 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 012345 v ce (v) 0 10 20 30 40 50 60 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0.0 0.5 1.0 1.5 2.0 v f (v) 0 10 20 30 40 50 60 i f ( a ) -40c 25c 150c
irgp30b60kd-ep www.irf.com 5 fig. 10 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = -40c fig. 11 - typical v ce vs. v ge t j = 150c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10s 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a 0 5 10 15 20 v ge (v) 0 50 100 150 200 250 i c e ( a ) t j = 25c t j = 150c t j = 150c t j = 25c
irgp30b60kd-ep 6 www.irf.com fig. 14 - typ. switching time vs. i c t j = 150c; l = 200h; v ce = 400v r g = 10 ? ; v ge = 15v fig. 13 - typ. energy loss vs. i c t j = 150c; l = 200h; v ce = 400v r g = 10 ? ; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 150c; l = 200h; v ce = 400v i ce = 30a; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 150c; l = 200h; v ce = 400v i ce = 30a; v ge = 15v 0 20 40 60 80 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20406080 i c (a) 0 500 1000 1500 2000 2500 3000 e n e r g y ( j ) e off e on 0 25 50 75 100 125 r g ( ? ) 0 500 1000 1500 2000 2500 3000 e n e r g y ( j ) e on e off 0 25 50 75 100 125 r g ( ? ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on
irgp30b60kd-ep www.irf.com 7 fig. 17 - typical diode i rr vs. i f t j = 150c fig. 18 - typical diode i rr vs. r g t j = 150c; i f = 30a fig. 20 - typical diode q rr v cc = 400v; v ge = 15v;t j = 150c fig. 19 - typical diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 30a; t j = 150c 0 500 1000 1500 di f /dt (a/s) 0 5 10 15 20 25 30 35 40 45 50 i r r ( a ) 0 20 40 60 80 i f (a) 0 5 10 15 20 25 30 35 40 45 50 i r r ( a ) r g = 4.7? r g = 22? r g = 47? r g = 100? r g = 10? 0 25 50 75 100 125 r g ( ?) 0 5 10 15 20 25 30 35 40 45 50 i r r ( a ) 0 500 1000 1500 di f /dt (a/s) 0 1000 2000 3000 4000 5000 q r r ( n c ) 4.7? 47 ? 100 ? 22? 60a 30a 15a 10?
irgp30b60kd-ep 8 www.irf.com fig. 21 - typical diode e rr vs. i f t j = 150c fig. 23 - typical gate charge vs. v ge i ce = 30a; l = 600h fig. 22 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 25 50 75 100 125 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 200v 400v 0 20 40 60 80 i f (a) 0 200 400 600 800 1000 1200 1400 e n e r g y ( j ) 47 ? 22 ? 100 ? 4.7? 10? 0 20 40 60 80 100 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres
irgp30b60kd-ep www.irf.com 9 fig 25. maximum transient thermal impedance, junction-to-case (diode) fig 24. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.200 0.000428 0.209 0.013031 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci= i / ri ci= i / ri 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.205 0.000136 0.505 0.001645 0.567 0.037985 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri
irgp30b60kd-ep 10 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit l rg 80 v dut 480v 1k vcc dut 0 l dc 4x dut 360v l rg vcc diode clamp / dut dut / dr iv er - 5v rg vcc dut r = v cc i cm
irgp30b60kd-ep www.irf.com 11 fig. wf1- typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2- typ. turn-on loss waveform @ t j = 150c using fig. ct.4 fig. wf3- typ. diode recovery waveform @ t j = 150c using fig. ct.4 fig. wf4- typ. s.c waveform @ t c = 150c using fig. ct.3 -100 0 100 200 300 400 500 600 700 -0.20 0.00 0.20 0.40 0.60 0.80 time(s) v ce (v) -5 0 5 10 15 20 25 30 35 i ce (a) 90% i ce 5% v ce 5% i ce eof f loss tf -100 0 100 200 300 400 500 600 700 15.90 16.00 16.10 16.20 16.30 time (s) v ce (v) -10 0 10 20 30 40 50 60 70 i ce (a) test current 90% test current 5% v ce 10% test current tr eon loss -700 -600 -500 -400 -300 -200 -100 0 100 -0.25 -0.05 0.15 0.35 time (s) v f (v) -40 -30 -20 -10 0 10 20 30 40 i f (a) pe a k i rr t rr q rr 10% pe a k irr 0 100 200 300 400 500 600 -5.00 0.00 5.00 10.00 15.00 time (s) v ce (v) 0 50 100 150 200 250 300 i ce (a) v ce i ce
irgp30b60kd-ep 12 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/06 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site.

dimensions are shown in milimeters (inches)

note: "p" in assembly line position indicates "lead-free"
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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